US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Protective passivation layer for magnetic tunnel junctions" (California Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,385, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Protective passivation layer for magnetic tunnel junctions" was invented by Jodi Mari Iwata (San Carlos, Calif.), Guenole Jan (San Jose, Calif.) and Ru-Ying Tong (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic device for magnetic random access memory (MRAM), spin torque MRAM, or spin torque oscillator technology is disclosed wherein a magnetic tunnel junction (MTJ) with a sidewall is formed between a bottom electrode and a top electrode. A passivation layer that is a single layer or multilayer comprising one of B, ...