US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Multi-protrusion transfer gate manufacturing method" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,862, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Multi-protrusion transfer gate manufacturing method" was invented by Kun-Huei Lin (Hsinchu, Taiwan), Yun-Wei Cheng (Hsinchu, Taiwan), Chun-Hao Chou (Hsinchu, Taiwan), Kuo-Cheng Lee (Hsinchu, Taiwan) and Chun-Wei Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling...