US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 28 for "Methods of forming SOI substrates" (Missouri Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,686, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of forming SOI substrates" was invented by Alex Usenko (Lake St Louis, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed."

The patent was filed on Ju...