US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,895, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Yu-Lin Yang (Baoshan Township, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and I-Sheng Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers,...