US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Method for eliminating divot formation and semiconductor device manufactured using the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,906, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for eliminating divot formation and semiconductor device manufactured using the same" was invented by Yu-Wen Tseng (Hsinchu, Taiwan), Po-Wei Liu (Hsinchu, Taiwan), Hung-Ling Shih (Hsinchu, Taiwan), Tsung-Yu Yang (Hsinchu, Taiwan), Tsung-Hua Yang (Hsinchu, Taiwan) and Yu-Chun Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for eliminating divot formation includes forming an isolation layer; forming a conduction layer which has an upper inclined boundary with the isolation layer such that the conduction laye...