US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 28 for "Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,926, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices" was invented by Kong-Beng Thei (Pao-Shan Village, Taiwan), Chien-Chih Chou (New Taipei, Taiwan), Hsiao-Chin Tuan (Taowan, Taiwan), Yi-Huan Chen (Hsin Chu, Taiwan) and Alexander Kalnitsky (San Francisco).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spa...