US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 28 for "Memory cell, integrated circuit, and manufacturing method of memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,388, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell, integrated circuit, and manufacturing method of memory cell" was invented by Yu-Chao Lin (Hsinchu, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan) and Da-Ching Chiou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a bottom electrode, a first dielectric layer, a top electrode, and a variable resistance layer. The first dielectric layer laterally surrounds the bottom electrode. The top electrode is disposed over the bottom electrode and the first dielectric layer. The variable resistance layer is sandwich...