US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Mechanisms for forming FinFET device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,750, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsin-Chu, Taiwan).

"Mechanisms for forming FinFET device" was invented by Che-Cheng Chang (New Taipei, Taiwan), Chang-Yin Chen (Taipei, Taiwan), Jr-Jung Lin (Hsinchu, Taiwan), Chih-Han Lin (Hsinchu, Taiwan) and Yung-Jung Chang (Cyonglin Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electr...