US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 28 for "Manufacturing method of fin-type field effect transistor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,843, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Manufacturing method of fin-type field effect transistor structure" was invented by Chun-Hsiung Tsai (Hsinchu County, Taiwan), Ziwei Fang (Hsinchu, Taiwan), Tsan-Chun Wang (Hsinchu, Taiwan) and Kei-Wei Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin-type field effect transistor comprising a substrate, at least one gate stack and epitaxy material portions is described. The substrate has fins and insulators located between the fins, and the fins include channel portions and flank portions beside the channel portions. The at...