ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,861, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Low noise vertical gate device structure" was invented by Seiji Takahashi (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming a pixel sensor. The method comprises forming a photodetector in a substrate. The substrate is patterned to define an opening above the photodetector. A gate electrode is formed within the opening, where the gate electrode has a top conductive body overlying a bottom conductive body. A first segment of a sidewall of the top co...