ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,740, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Interconnect structure and methods of forming the same" was invented by Shu-Wei Li (Hsinchu, Taiwan), Yu-Chen Chan (Taichung, Taiwan), Shin-Yi Yang (New Taipei, Taiwan), Ming-Han Lee (Taipei, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first dielectric layer and one or more first conductive features disposed in the first dielectric layer. The one or more first conductive features i...