US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 28 for "High voltage device with gate extensions" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,896, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High voltage device with gate extensions" was invented by Jhih-Bin Chen (Hsinchu, Taiwan) and Ming Chyi Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip. The integrated chip includes a source region disposed within a substrate, and a drain region disposed within the substrate and separated from the source region. A plurality of separate isolation structures are disposed within the substrate. The plurality of separate isolation structures have outermost sidewalls that face one ...