US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Gate structure of semiconductor device and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,701, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate structure of semiconductor device and method of manufacture" was invented by Tsan-Chun Wang (Hsinchu, Taiwan) and Chun-Feng Nieh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of manufacture are provided. In some embodiments a divergent ion beam is utilized to implant ions into a capping layer, wherein the capping layer is located over a first metal layer, a dielectric layer, and an interfacial layer over a semiconductor fin. The ions are then driven from the capping layer into one or mor...