US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Gate air spacer for fin-like field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,922, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate air spacer for fin-like field effect transistor" was invented by Chien-Ning Yao (Hsinchu, Taiwan), Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gates having air gaps therein, and methods of fabrication thereof, are disclosed herein. An exemplary gate includes a gate electrode and a gate dielectric. A first air gap is between and/or separates a first sidewall of the gate electrode from the gate ...