US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "FinFET device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,938, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"FinFET device and method of forming same" was invented by Shahaji B. More (Hsinchu, Taiwan) and Shih-Chieh Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A FinFET device and a method of forming the same are provided. The method includes forming semiconductor strips over a substrate. Isolation regions are formed over the substrate and between adjacent semiconductor strips. A first recess process is performed on the isolation regions to expose first portions of the semiconductor strips. The first portions of the semiconduct...