US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "EUV photoresist with low-activation-energy ligands or high-developer-solubility ligands" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,283, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"EUV photoresist with low-activation-energy ligands or high-developer-solubility ligands" was invented by An-Ren Zi (Hsinchu, Taiwan), Chen-Yu Liu (Kaohsiung, Taiwan) and Ching-Yu Chang (Yilang County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure:The second ligands each have a following structure:{circle around (M)} represents the core group. L' re...