US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "EUV photo masks and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,280, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"EUV photo masks and manufacturing method thereof" was invented by Yun-Yue Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Jr based material, a Pt based material or...