US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Etch selectivity control for epitaxy process window enlargement in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,927, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Etch selectivity control for epitaxy process window enlargement in semiconductor devices" was invented by Shih-Yao Lin (New Taipei, Taiwan), Te-Yung Liu (Hsinchu, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. ...