ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,323, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Embedded backside memory on a field effect transistor" was invented by Kuan-Liang Liu (Pingtung, Taiwan), Sheng-Chau Chen (Tainan, Taiwan), Chung-Liang Cheng (Changhua County, Taiwan), Chia-Shiung Tsai (Hsin-Chu, Taiwan), Yeong-Jyh Lin (Caotun Township, Taiwan), Pinyen Lin (Rochester, N.Y.) and Huang-Lin Chao (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip that includes a first and second transistors arranged over a substrate. The first transistor includes fi...