ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,838, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Device including MIM capacitor and resistor" was invented by Chen-Hsiang Hung (Hsin-Chu, Taiwan), Li-Hsin Chu (New Taipei, Taiwan), Chia-Ping Lai (Hsinchu, Taiwan) and Chung-Chuan Tseng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two ...