US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 28 for "Bipolar junction transistor (BJT) and fabricating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,910, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Bipolar junction transistor (BJT) and fabricating method thereof" was invented by Kuan-Jung Chen (Hsinchu, Taiwan), Chun-Ming Lin (Taichung, Taiwan), Tsung-Lin Lee (New Taipei, Taiwan), Shiuan-Jeng Lin (Hsinchu, Taiwan) and Hung-Lin Chen (Pingtung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Bipolar junction transistor (BJT) structures are provided. A BJT structure includes a semiconductor substrate, a collector region formed in the semiconductor substrate, a base region formed over the collector region, an emitter region formed over...