ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,890, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Barrier layer for metal insulator metal capacitors" was invented by Anhao Cheng (Taichung, Taiwan), Fang-Ting Kuo (Zhubei, Taiwan) and Yen-Yu Chen (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to a method for the fabrication of MiM capacitor structures with metallic electrodes having nitrogen-rich metal nitride layers. The method includes depositing a first electrode bilayer on a first interconnect disposed on a substrate, where the first electrode includes a first layer and a second layer with...