US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 28 for "Back-side deep trench isolation structure for image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,877, issued on Jan. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back-side deep trench isolation structure for image sensor" was invented by Cheng-Ta Wu (Shueishang Township, Taiwan), Kuo-Hwa Tzeng (Taipei, Taiwan) and Yeur-Luen Tu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to co...