US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Vertical static random access memory and method of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,467, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Vertical static random access memory and method of fabricating thereof" was invented by Chih-Chuan Yang (Hsinchu, Taiwan), Kuo-Hsiu Hsu (Taoyuan County, Taiwan), Chia-Hao Pao (Kaohsiung, Taiwan) and Shih-Hao Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A four times contacted poly pitch (4CPP) static random-access memory (SRAM) cell layout is disclosed that forms six SRAM transistors from one OD region and four poly lines at a frontside of a substrate and provides a double-sided routing structure for word lines, bit lines...