US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Transistor gate structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,571, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structures and methods of forming the same" was invented by Hsueh-Ju Chen (Taipei, Taiwan), Yi Hsuan Chen (Hsinchu, Taiwan), Jyun-Yi Wu (Hsinchu, Taiwan), Wen-Hung Huang (Hsinchu, Taiwan), Tsung-Da Lin (Pingtung County, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Kuo-Feng Yu (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a first gate d...