US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Thermal sensor using inversion diffusivity resistance" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,364, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thermal sensor using inversion diffusivity resistance" was invented by Jaw-Juinn Horng (Hsinchu, Taiwan), Szu-Lin Liu (Hsinchu, Taiwan), Yung-Chow Peng (Hsinchu, Taiwan) and Shenggao Li (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device including a first plurality of metal-oxide semiconductor field-effect transistors electrically connected in series. Each of the first plurality of metal-oxide semiconductor field-effect transistors includes a first gate structure, a first drain/source region on one side of the first gate str...