US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Source/drain contact for semiconductor device structure" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,791, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Source/drain contact for semiconductor device structure" was invented by Chun-Hung Liao (Taichung, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a gate structure formed over a substrate. The semiconductor device structure also includes a source/drain structure formed beside the gate structure. The semiconductor device structure further includes a contact structure formed over the source/drain ...