ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,596, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Sensor device and method for forming the same" was invented by Po-Chun Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a sensor device comprising a photodetector with a simplified manufacturing process. A semiconductor substrate comprises an avalanche region at which a p-type region and an n-type region form a PN junction. An inner absorption layer is recessed into the semiconductor substrate, wherein the inner absorption layer has a bottom protrusion protruding...