US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Semiconductor device and method of manufacturing semiconductor device" (Belgian Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,525, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Marcus Johannes Henricus Van Dal (Linden, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an oxide semiconductor stack, a first gate, a first contact structure, and a second contact structure. The oxide semiconductor stack includes an n-type oxide semiconductor layer and a p-type oxide semiconductor layer stacked on each other. The first gate is over the oxide semiconductor stack...