US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Semiconductor device and method for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,557, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method for making the same" was invented by Chi-Yi Chuang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a hybrid integrated circuit. In one implementation, an integrated circuit may have a first region with a first gate structure having a ferroelectric gate dielectric, at least one source associated with the first gate of the first region, and at least one drai...