US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,561, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Shiang-Bau Wang (Pingzchen, Taiwan), Li-Wei Yin (Hsinchu, Taiwan), Chen-Huang Huang (Hsinchu, Taiwan), Ming-Jhe Sie (Taipei, Taiwan) and Ryan Chia-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the ga...