US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Method of manufacturing a semiconductor device including depositing and etching a liner multiple times" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,562, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device including depositing and etching a liner multiple times" was invented by Shu-Uei Jang (Hsinchu, Taiwan), Chen-Huang Huang (Hsinchu, Taiwan), Ryan Chia-Jen Chen (Hsinchu, Taiwan), Shiang-Bau Wang (Pingzchen, Taiwan) and Shu-Yuan Ku (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to...