US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Method of manufacturing a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,760, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device" was invented by Yu-Fu Wang (New Taipei, Taiwan) and Shih-Ming Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a first tone resist layer over an underlayer. The first tone resist layer is pattern to form a first pattern exposing a portion of the underlayer. The first pattern is extended into the underlayer, and the first tone resist layer is removed. A second tone resist layer is formed over the underlayer, whe...