US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Method of forming photoresist pattern" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,739, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming photoresist pattern" was invented by Yu-Chung Su (Hsinchu, Taiwan), Tsung-Han Ko (New Taipei, Taiwan) and Ching-Yu Chang (Yuansun Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer ...