US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Method of forming a gap under a source/drain feature of a multi-gate device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,532, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming a gap under a source/drain feature of a multi-gate device" was invented by Che-Lun Chang (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Multi-gate transistor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a fin-shaped structure over a substrate and including channel layers interleaved by sacrificial layers, recessing the fin-shaped structure to form a source/drain re...