US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Method for manufacturing semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,544, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor device" was invented by Kuo-Ju Chen (Taichung, Taiwan), Wei-Ting Chang (Hsinchu, Taiwan), Po-Kang Ho (Taoyuan, Taiwan), Su-Hao Liu (Chiayi County, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin structure over a substrate; depositing a dummy gate layer over the substrate and the fin structure; etching back the dummy gate layer; performing an implantation process to the dummy gate layer to form an implantation region in the dummy gate...