US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Inductor RF isolation structure in an interposer and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,819, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Inductor RF isolation structure in an interposer and methods of forming the same" was invented by Hsien-Wei Chen (Hsinchu, Taiwan), Meng-Liang Lin (Hsinchu, Taiwan) and Shin-Puu Jeng (Po-Shan Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer thr...