ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,485, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Flash memory structure with enhanced floating gate" was invented by Hung-Shu Huang (Taichung, Taiwan) and Ming Chyi Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method of forming a flash memory structure. The method includes forming a sacrificial material over a substrate, and forming a plurality of trenches extending through the sacrificial material to within the substrate. A dielectric material is formed within the plurality of trenches. The dielectric material is selectively etched, acc...