US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Fin jog structure and methods of making same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,547, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Fin jog structure and methods of making same" was invented by Wei-Hao Wu (Hsinchu, Taiwan) and Chung-Cheng Chien (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a workpiece. The workpiece includes a substrate, a fin protruding from the substrate, and a dummy gate structure over the fin. The method further includes performing an oxidizing process to exposed surfaces of the fin and the dummy gate structure to form an oxide layer thereon, removing the oxide layer to expose an unoxidized top surface and s...