US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Epitaxial fin structures of FINFET having an epitaxial buffer region and an epitaxial capping region" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,529, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Epitaxial fin structures of FINFET having an epitaxial buffer region and an epitaxial capping region" was invented by Hsueh-Chang Sung (Zhubei, Taiwan) and Kun-Mu Li (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin structure on a substrate is disclosed. The fin structure can comprises a first epitaxial region and a second epitaxial region separated by a dielectric region, a merged epitaxial region on the first epitaxial region and the second epitaxial region, an epitaxial buffer region on a top surface of the merged e...