US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Drain sharing for memory cell thin film access transistors and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,475, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Drain sharing for memory cell thin film access transistors and methods for forming the same" was invented by Katherine H. Chiang (New Taipei, Taiwan), Ken-Ichi Goto (Hsin-Chu, Taiwan), Chia Yu Ling (Hsinchu, Taiwan), Neil Murray (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first thin film transistor and a second thin film transistor include a semiconducting metal oxide plate located over a substrate, and a set of electrode structures located on the semiconducting metal oxide plate and comprisi...