ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,771, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Barrier layer for an interconnect structure" was invented by Chien Chang (Hsinchu, Taiwan), Min-Hsiu Hung (Tainan, Taiwan), Yu-Hsiang Liao (Hsinchu, Taiwan), Yu-Shiuan Wang (Taipei, Taiwan), Tai Min Chang (Taipei, Taiwan), Kan-Ju Lin (Kaohsiung, Taiwan), Chih-Shiun Chou (Hsinchu, Taiwan), Hung-Yi Huang (Hsin-chu, Taiwan), Chih-Wei Chang (Hsin-Chu, Taiwan) and Ming-Hsing Tsai (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interco...