US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Access transistor including a metal oxide barrier layer and methods for forming the same" (Belgian, Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,522, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Access transistor including a metal oxide barrier layer and methods for forming the same" was invented by Mauricio Manfrini (Zhubei, Taiwan), Marcus Johannes Henricus Van Dal (Linden, Belgium), Georgios Vellianitis (Heverlee, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor may be provided by forming, in a forward order or in a reverse order, a gate electrode, a semiconducting metal oxide liner, a gate dielectric, and an active layer over a substrate, and by forming a source electrode and...