US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "SRAM cell with write-assist transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,115, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"SRAM cell with write-assist transistors" was invented by Hsin-Cheng Lin (Taipei, Taiwan), Tao Chou (New Taipei, Taiwan), Kuan-Ying Chiu (Taoyuan, Taiwan) and Chee-Wee Liu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SRAM cell includes a first active region, a first gate structure, a second gate structure, and a first source/drain contact region. The first gate structure is over the first active region and forms a pull-up transistor with the first active region. The second gate structure is over the first active region and ...