US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Semiconductor device with reverse-cut source/drain contact structure and method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,498, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with reverse-cut source/drain contact structure and method thereof" was invented by Meng-Huan Jao (Taichung, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Huan-Chieh Su (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a structure having gate structures, source/drain electrodes, a first etch stop layer (ESL), a first interlayer dielectric (ILD) layer, a second ESL, and a second ILD layer. The method includes forming a first etch mask; performing a first etching to the second ...