ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,499, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Shih-Chieh Chao (Taichung, Taiwan), Ryan Chia-Jen Chen (Hsinchu, Taiwan), Yih-Ann Lin (Hsinchu, Taiwan), Yu-Hsien Lin (Kaohsiung, Taiwan), Li-Wei Yin (Hsinchu, Taiwan), Tzu-Wen Pan (Hsinchu, Taiwan) and Jih-Sheng Yang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate stack for a short-channel device and a longer-channel device; forming a first metal cap layer over the gate stacks for the short-channel device and the longer-chan...