US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Manufacturing method of semiconductor structure including static random access memory cell" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,445, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Manufacturing method of semiconductor structure including static random access memory cell" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first channel pattern on a substrate from a top view; forming first and second gate patterns extending across the first channel pattern; forming first, second, and third source/drain patterns on the first channel pattern, the first and second source/drain patterns on opposite sides of the first gate pattern and the second and ...