US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Integrated circuit metal gate structure and method of fabricating thereof" (Taiwanese, Singaporean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,531, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit metal gate structure and method of fabricating thereof" was invented by Yong-Tian Hou (Singapore), Yuan-Shun Chao (Hsinchu County, Taiwan), Chien-Hao Chen (Chuangwei Township, Taiwan) and Cheng-Lung Hung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering c...