US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Fin-based well straps for improving memory macro performance" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,446, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Fin-based well straps for improving memory macro performance" was invented by Chih-Chuan Yang (Hsinchu, Taiwan), Kuo-Hsiu Hsu (Taoyuan County, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan), Wen-Chun Keng (Hsinchu, Taiwan) and Lien Jung Hung (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor and a well strap feature disposed over a doped region of a first type dopant. The first transistor includes a first gate structure engaging a first channel region and a first epitaxial feature a...