US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Fill fins for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,517, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Fill fins for semiconductor devices" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure includes a first channel region, a first gate metal engaging the first channel region, a first dielectric material layer disposed under the first gate metal and on an end of the first gate metal, a second channel region, a second gate metal engaging the second channel region, a second dielectric m...